| 发明名称 |
Updating reference voltages to compensate for changes in threshold voltage distributions of nonvolatile memory cells |
| 摘要 |
A system including a reference voltage module configured to generate one or more reference voltages for determining states of a plurality of memory cells of a nonvolatile memory, where the plurality of memory cells have a threshold voltage distribution. A divider module divides, in response to a change in the threshold voltage distribution, a voltage range into a plurality of regions. An update module updates, to compensate for the change in the threshold voltage distribution, one of the reference voltages to a voltage value associated with one of the plurality of regions. |
| 申请公布号 |
US8780637(B2) |
申请公布日期 |
2014.07.15 |
| 申请号 |
US201414154477 |
申请日期 |
2014.01.14 |
| 申请人 |
Marvell World Trade Ltd. |
发明人 |
Yang Xueshi |
| 分类号 |
G11C11/34;G11C16/10;G11C16/30;G11C16/12;G11C16/04;H01L27/115 |
主分类号 |
G11C11/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A system comprising:
a reference voltage module configured to generate one or more reference voltages for determining states of a plurality of memory cells of a nonvolatile memory, wherein the plurality of memory cells of the nonvolatile memory have a threshold voltage distribution; a divider module configured to divide, in response to a change in the threshold voltage distribution, a voltage range into a plurality of regions; and an update module configured to update, to compensate for the change in the threshold voltage distribution, one of the reference voltages to a voltage value associated with one of the plurality of regions. |
| 地址 |
St. Michael BB |
