发明名称 Memristive device having a porous dopant diffusion element
摘要 A memristive device includes: a first electrode; a second electrode; a memristive matrix interposed between the first electrode and the second electrode; a porous dopant diffusion element in physical contact with the memristive matrix and in proximity to the first electrode and the second electrode; and a first mobile dopant species which moves through the porous dopant diffusion element in response to a programming electrical field. A method for using a memristive device having a porous dopant diffusion element includes applying a voltage bias to generate a programming electrical field such that dopants move through the porous dopant diffusion element, thereby changing the distribution of dopants within a memristive matrix to form a first state; removing the voltage bias, the dopants being substantially immobile in the absence of the programming electrical field; and applying a reading energy to the memristive device to sense the first state.
申请公布号 US8780606(B2) 申请公布日期 2014.07.15
申请号 US200813120904 申请日期 2008.12.23
申请人 Hewlett-Packard Development Company, L.P. 发明人 Li Zhiyong;Ou Fung Suong;Tong William M.
分类号 G11C11/00;G11C13/00;B82Y10/00;G11C11/56;G11C13/02;H01L45/00 主分类号 G11C11/00
代理机构 代理人
主权项 1. A memristive device comprising: a first electrode; a second electrode; a memristive matrix interposed between said first electrode and said second electrode; a porous dopant diffusion element in physical contact with said memristive matrix and in proximity to at least one of said first electrode and said second electrode; and a first mobile dopant species, said first mobile dopant species moving through said porous dopant diffusion element in response to a programming electrical field generated by said first electrode and said second electrode, said programming electrical field altering a distribution of said first mobile dopant species within said memristive matrix.
地址 Houston TX US