发明名称 |
Memristive device having a porous dopant diffusion element |
摘要 |
A memristive device includes: a first electrode; a second electrode; a memristive matrix interposed between the first electrode and the second electrode; a porous dopant diffusion element in physical contact with the memristive matrix and in proximity to the first electrode and the second electrode; and a first mobile dopant species which moves through the porous dopant diffusion element in response to a programming electrical field. A method for using a memristive device having a porous dopant diffusion element includes applying a voltage bias to generate a programming electrical field such that dopants move through the porous dopant diffusion element, thereby changing the distribution of dopants within a memristive matrix to form a first state; removing the voltage bias, the dopants being substantially immobile in the absence of the programming electrical field; and applying a reading energy to the memristive device to sense the first state. |
申请公布号 |
US8780606(B2) |
申请公布日期 |
2014.07.15 |
申请号 |
US200813120904 |
申请日期 |
2008.12.23 |
申请人 |
Hewlett-Packard Development Company, L.P. |
发明人 |
Li Zhiyong;Ou Fung Suong;Tong William M. |
分类号 |
G11C11/00;G11C13/00;B82Y10/00;G11C11/56;G11C13/02;H01L45/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
1. A memristive device comprising:
a first electrode; a second electrode; a memristive matrix interposed between said first electrode and said second electrode; a porous dopant diffusion element in physical contact with said memristive matrix and in proximity to at least one of said first electrode and said second electrode; and a first mobile dopant species, said first mobile dopant species moving through said porous dopant diffusion element in response to a programming electrical field generated by said first electrode and said second electrode, said programming electrical field altering a distribution of said first mobile dopant species within said memristive matrix. |
地址 |
Houston TX US |