| 发明名称 | Method of manufacturing P-type ZnO nanowires and method of manufacturing energy conversion device | ||
| 摘要 | A method of manufacturing silver (Ag)-doped zinc oxide (ZnO) nanowires and a method of manufacturing an energy conversion device are provided. In the method of manufacturing Ag-doped ZnO nanowires, the Ag-doped nanowires are grown by a low temperature hydrothermal synthesis method using a Ag-containing aqueous solution. | ||
| 申请公布号 | US8778731(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US201213667668 | 申请日期 | 2012.11.02 |
| 申请人 | Samsung Electronics Co., Ltd.;Industry-University Cooperation Foundation Hanyang University | 发明人 | Kim Hyun-jin;Park Young-jun;Lee Sang-hyo;Hong Jin-pyo;Lee Jun-seok |
| 分类号 | H01L29/227;H01L29/06 | 主分类号 | H01L29/227 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A method of manufacturing silver (Ag)-doped zinc oxide (ZnO) nanowires, the method comprising growing the Ag-doped ZnO nanowires on a substrate by a low temperature hydrothermal synthesis method using an Ag-containing aqueous solution. | ||
| 地址 | Suwon-Si KR | ||