| 发明名称 | Methods of manufacturing non-volatile phase-change memory devices | ||
| 摘要 | Methods of manufacturing non-volatile memory devices may include separating first phase-change material groups and second phase-change material groups, which have different sizes, from a target including phase-change materials and faulting a phase-change material layer on an object by using the first phase-change material groups and the second phase-change material groups. | ||
| 申请公布号 | US8778728(B2) | 申请公布日期 | 2014.07.15 |
| 申请号 | US201113160761 | 申请日期 | 2011.06.15 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Choi Byoung-deog;Ahn Dong-ho;Kang Man-sug;Kim Young-kuk;Oh Jin-ho |
| 分类号 | H01L21/00 | 主分类号 | H01L21/00 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A method of manufacturing a non-volatile memory device, the method comprising: separating at least one first phase-change material group and at least one second phase-change material group from a target, a size of the first phase-change material group being different from a size of the second phase-change material group; and forming a phase-change material layer on an object, the phase-change material layer including the first and second phase-change material groups, wherein the first phase-change material group and the second phase-change material group have the same characteristics. | ||
| 地址 | Gyeonggi-Do KR | ||