发明名称 Polishing endpoint detection method
摘要 Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change.
申请公布号 US8777694(B2) 申请公布日期 2014.07.15
申请号 US201314036321 申请日期 2013.09.25
申请人 Ebara Corporation;Kabushiki Kaisha Toshiba 发明人 Ohta Shinrou;Shigeta Atsushi
分类号 B24B1/00;B24B49/00;B24B51/00 主分类号 B24B1/00
代理机构 Wenderoth, Lind & Ponack, L.L.P. 代理人 Wenderoth, Lind & Ponack, L.L.P.
主权项 1. A method of detecting a polishing endpoint of a substrate, comprising: polishing a surface of the substrate having a film with a polishing pad; applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from said plurality of spectral profiles obtained; calculating a difference in the reflection intensity at at least one predetermined wavelength between said spectral profiles selected; determining an amount of change in the reflection intensity from said difference; and determining a polishing endpoint based on said amount of change.
地址 Tokyo JP