Electrical erasable programmable read-only memory and manufacturing method thereof

摘要

An electrical erasable programmable read-only memory (EEPROM) including a floating transistor formed on a semiconductor substrate and a tunneling transistor formed on a semiconductor substrate and configured to erase electrons trapped in the floating transistor. The tunneling transistor has a source junction region and a drain junction region that are integrally joined by lateral diffusion. The EPROM maintains a small cell size without any additional mask process, and is useable as an MTP EEPROM because electrical erasure is enabled. In addition, the adjustment of the width of a gate constituting the tunneling transistor ensures an improved degree of freedom to adjust an erasure voltage can be enhanced.

主权项

1. An electrical erasable programmable read-only memory (EEPROM), comprising:
a floating transistor formed on a semiconductor substrate; and a tunneling transistor formed on the semiconductor substrate and configured to erase electrons trapped in the floating transistor, wherein a gate of the tunneling transistor has a narrower width than a gate of the floating transistor, wherein the tunneling transistor has a source junction region and a drain junction region that are integrally joined by lateral diffusion.