Metallization systems of semiconductor devices comprising a copper/silicon compound as a barrier material

摘要

In sophisticated metallization systems of semiconductor devices, a sensitive core metal, such as copper, may be efficiently confined by a conductive barrier material comprising a copper/silicon compound, such as a copper silicide, which may provide superior electromigration behavior and higher electrical conductivity compared to conventionally used tantalum/tantalum nitride barrier systems.

主权项

1. A method of forming a metallization system of a semiconductor device, the method comprising:
forming an opening in a dielectric layer of a metallization layer of said metallization system, said opening exposing surface areas of said dielectric layer; forming a conductive barrier layer comprising a copper/silicon compound, said copper/silicon compound being positioned on and in contact with at least an entirety of said surface areas of said dielectric layer exposed by said opening; and forming a copper-containing metal on said conductive barrier layer.