Enhancement of properties of thin film ferroelectric materials

摘要

Methods are provided for enhancing properties, including polarization, of thin-film ferroelectric materials in electronic devices. According to one embodiment, a process for enhancing properties of ferroelectric material in a device having completed wafer processing includes applying mechanical stress to the device, independently controlling the temperature of the device to cycle the temperature from room temperature to at or near the Curie temperature of the ferroelectric material and back to room temperature while the device is applied with the mechanical stress, and then removing the mechanical stress. Certain of the subject methods can be performed as part of a back end of line (BEOL) process, and may be performed during the testing phase at wafer or die level.

主权项

1. A method of enhancing the properties of a ferroelectric device, the method comprising:
applying an external mechanical stress to a substrate comprising a ferroelectric device, metal layers, pads, and passivation; performing a temperature cycling for heating and cooling the substrate having the external mechanical stress, wherein while the external mechanical stress is applied, the temperature cycling is performed at temperatures selected so as to enhance ferroelectric properties of the ferroelectric device; and removing the external mechanical stress.