| 发明名称 |
Hydrogen barrier for ferroelectric capacitors |
| 摘要 |
An integrated circuit containing a FeCap array. The FeCap array is at least partially surrounded on the sides by hydrogen barrier walls and on the top by a hydrogen barrier top plate. A method for at least partially enclosing a FeCap array with hydrogen barrier walls and a hydrogen barrier top plate. |
| 申请公布号 |
US8779485(B2) |
申请公布日期 |
2014.07.15 |
| 申请号 |
US201213480044 |
申请日期 |
2012.05.24 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Udayakumar Kezhakkedath R.;Summerfelt Scott R.;Moise Ted S.;Jain Manoj K. |
| 分类号 |
H01L21/02;H01L23/48;H01L21/768;H01L49/02;H01L27/115 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
Keagy Rose Alyssa;Telecky, Jr. Frederick J. |
| 主权项 |
1. An integrated circuit comprising:
an FeCap array; a plurality of wall seals surrounding said FeCap array, said plurality of wall seals containing hydrogen barrier material, where a first of said plurality of wall seals is formed on top of a second of said plurality of wall seals; and a top plate seal over said FeCap array, said top plate seal in contact with said first of said plurality of wall seals wherein at least one of said plurality of wall seals is a metal-1 wall seal having a gap through which at least one interconnect signal lead passes. |
| 地址 |
Dallas TX US |
