发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem in which: an insulation film between adjacent pixels, which is also called a bank, a partition wall, a barrier wall, an embankment, or the like is provided over source wiring of a thin film transistor, drain wiring of a thin film transistor, or a power supply line; an intersection part of the wiring, especially provided for different layers, has a large step as compared with other parts; and even in the case where the insulation film provided between the adjacent pixels is formed by a coating method, some areas are formed thinly due to the influence of this step and the withstand voltage at this area is lowered.SOLUTION: In the vicinity of a convex part with a large step, particularly in the vicinity of a wiring intersection part, a dummy member is disposed to ease the unevenness of the insulation film formed thereon. Upper wiring and lower wiring are formed displaced from each other so that the ends of the upper wiring and the lower wiring do not correspond to each other.
申请公布号 JP2014131048(A) 申请公布日期 2014.07.10
申请号 JP20140003980 申请日期 2014.01.14
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SAKAKURA MASAYUKI;YAMAZAKI SHUNPEI
分类号 H01L21/768;G02F1/1343;G02F1/1368;G09F9/30;H01L21/336;H01L23/522;H01L29/786;H01L51/50 主分类号 H01L21/768
代理机构 代理人
主权项
地址