| 主权项 |
1. A method for forming a structure, the method comprising:
providing a substrate having an insulator layer disposed thereon, and a first semiconductor layer disposed in contact with the insulator layer; and forming a fin field-effect transistor on the substrate by:
patterning the first semiconductor layer to define a source region, a drain region, and at least one fin disposed between the source and the drain regions,forming a second semiconductor layer along a sidewall of the fin, the second semiconductor layer being a same material as the first semiconductor layer,forming a gate dielectric layer at least a portion of which is disposed over the fin, andforming a gate over the gate dielectric layer disposed over the fin. |
