发明名称 MEMORY STRUCTURE WITH REDUCED NUMBER OF REFLECTED SIGNALS
摘要 A memory structure with reduced-reflection signals at least includes a processing unit; a lumped circuit unit, connected to the processing unit; a plurality of memories, connected to the lumped circuit unit; and a reflected signal absorption unit, disposed at one end of the lumped circuit unit. Thereby, with the cooperation of the processing unit with each memory for signal transmission, the reflected signal absorption unit can be used to absorb the reflected signals so as to reduce the number of reflected signals during signal transmission, achieving the effect of stable operation for the memories.
申请公布号 US2014192582(A1) 申请公布日期 2014.07.10
申请号 US201313738129 申请日期 2013.01.10
申请人 EOREX CORPORATION 发明人 LIN Cheng-Lung
分类号 G11C5/06 主分类号 G11C5/06
代理机构 代理人
主权项 1. A memory structure with reduced-reflection signals, at least comprising: a processing unit; a lumped circuit unit, connected to the processing unit; a plurality of memories, connected to the lumped circuit unit; and a reflected signal absorption unit, disposed at one end of the lumped circuit unit.
地址 Hsinchu County TW