| 发明名称 |
Semiconductor Device and Method for Fabricating the Same |
| 摘要 |
A semiconductor device and a method for fabricating the same are provided. The semiconductor device comprising a substrate including a first surface and a second surface that face each other, a planarization layer formed on the first surface of the substrate, a passivation layer formed on the planarization layer, and a through via contact penetrating the substrate, the planarization layer, and the passivation layer, and being exposed from the passivation layer. |
| 申请公布号 |
US2014191414(A1) |
申请公布日期 |
2014.07.10 |
| 申请号 |
US201414146741 |
申请日期 |
2014.01.03 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Tae-Seong |
| 分类号 |
H01L23/48 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate including a first surface and a second surface that are opposite each other; a planarization layer on the first surface of the substrate; a passivation layer on the planarization layer; and a through via contact penetrating the substrate, the planarization layer, and the passivation layer, an end of the through via contact being exposed through an opening in the passivation layer. |
| 地址 |
Suwon-si KR |
