METHODS OF FORMING BULK FINFET DEVICES BY PERFORMING A RECESSING PROCESS ON LINER MATERIALS TO DEFINE DIFFERENT FIN HEIGHTS AND FINFET DEVICES WITH SUCH RECESSED LINER MATERIALS

摘要

One method includes performing an etching process through a patterned mask layer to form trenches in a substrate that defines first and second fins, forming liner material adjacent the first fin to a first thickness, forming liner material adjacent the second fin to a second thickness different from the first thickness, forming insulating material in the trenches adjacent the liner materials and above the mask layer, performing a process operation to remove portions of the layer of insulating material and to expose portions of the liner materials, performing another etching process to remove portions of the liner materials and the mask layer to expose the first fin to a first height and the second fin to a second height different from the first height, performing another etching process to define a reduced-thickness layer of insulating material, and forming a gate structure around a portion of the first and second fin.

主权项

1. A method of forming a FinFET device, comprising:
forming a patterned hard mask layer above a semiconducting substrate; performing at least one first etching process through said patterned hard mask layer to form a plurality of trenches in said semiconducting substrate that define at least first and second fins; forming liner material adjacent to at least said first fin to a first thickness; forming liner material adjacent to at least said second fin to a second thickness that is different from said first thickness; forming a layer of insulating material in said trenches adjacent said liner materials and above said patterned hard mask layer; performing at least one process operation to remove portions of said layer of insulating material and to expose portions of said liner materials; performing at least one second etching process to remove portions of said liner materials and said patterned hard mask layer, wherein removal of said liner materials results in exposing said first fin to a first height and said second fin to a second height that is different from said first height; performing at least one third etching process on said layer of insulating material to thereby define a reduced-thickness layer of insulating material; and forming a gate structure around a portion of said first fin and said second fin.