APPARATUS AND METHOD FOR EDGE BEVEL REMOVAL OF COPPER FROM SILICON WAFERS

摘要

Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

主权项

1. An apparatus for removing unwanted metal deposited on an edge bevel area of a semiconductor wafer, the apparatus comprising:
a process chamber; a wafer chuck for supporting and rotating the wafer during removal of the edge bevel area; and a controller comprising:
program instructions for rotating the wafer;program instructions for prerinsing the wafer using a prerinse liquid;program instructions for increasing the rotational speed of the wafer thereby thinning a layer of the prerinse liquid; andprogram instructions for delivering a stream of liquid etchant into the thinned layer of prerinse liquid near the edge bevel area of the rotating wafer.