发明名称 ONE-DIMENSIONAL TITANIUM NANOSTRUCTURE AND METHOD FOR FABRICATING THE SAME
摘要 A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.
申请公布号 US2014193289(A1) 申请公布日期 2014.07.10
申请号 US201313846047 申请日期 2013.03.18
申请人 NATIONAL CHIAO TUNG UNIVERSITY 发明人 CHEN Tze-Lung;CHIU Hsin-Tien;LEE Chi-Young
分类号 C23C16/44 主分类号 C23C16/44
代理机构 代理人
主权项 1. A method for fabricating a one-dimensional titanium nanostructure, comprising steps: placing a heat-resistant substrate and a titanium metal in a CVD (Chemical Vapor Deposition) reaction chamber; and using a carrier gas to transport titanium tetrachloride into said CVD reaction chamber, undertaking a reaction of said titanium metal and said titanium tetrachloride to generate titanium subchloride, and letting said titanium subchloride thermolyze to form a one-dimensional titanium nanostructure on said heat-resistant substrate, under a reaction condition of a reaction temperature of 300-900° C., a deposition temperature of 200-850° C., a flow rate of a carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours.
地址 Hsinchu City TW