| 发明名称 |
DUMMY GATE INTERCONNECT FOR SEMICONDUCTOR DEVICE |
| 摘要 |
A method of forming a semiconductor device comprising a dummy gate interconnect includes forming a dummy gate on a substrate, the dummy gate comprising a dummy gate metal layer located on the substrate, and a dummy gate polysilicon layer located on the dummy gate metal layer; forming an active gate on the substrate, the active gate comprising an active gate metal layer located on the substrate, and an active gate polysilicon layer located on the active gate metal layer; and etching the dummy gate polysilicon layer to remove at least a portion of the dummy gate polysilicon layer to form the dummy gate interconnect, wherein the active gate polysilicon layer is not etched during the etching of the dummy gate polysilicon layer. |
| 申请公布号 |
US2014191295(A1) |
申请公布日期 |
2014.07.10 |
| 申请号 |
US201313734012 |
申请日期 |
2013.01.04 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Greene Brian J.;Liang Yue;Yu Xiaojun |
| 分类号 |
H01L21/28;H01L29/78 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device comprising a dummy gate interconnect, comprising:
forming a dummy gate on a substrate, the dummy gate comprising a dummy gate metal layer located on the substrate, and a dummy gate polysilicon layer located on the dummy gate metal layer; forming an active gate on the substrate, the active gate comprising an active gate metal layer located on the substrate, and an active gate polysilicon layer located on the active gate metal layer; and etching the dummy gate polysilicon layer to remove at least a portion of the dummy gate polysilicon layer to form the dummy gate interconnect, wherein the active gate polysilicon layer is not etched during the etching of the dummy gate polysilicon layer. |
| 地址 |
Armonk NY US |
