| 发明名称 |
MEMORY DEVICE AND METHOD OF FABRICATING THEREOF |
| 摘要 |
Subject matter disclosed herein relates to a process flow to form a gate structure of a memory device. |
| 申请公布号 |
US2014191307(A1) |
申请公布日期 |
2014.07.10 |
| 申请号 |
US201414207035 |
申请日期 |
2014.03.12 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Albini Giulio;Bacciaglia Paola |
| 分类号 |
H01L29/49 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising:
a gate stack disposed on a semiconductor substrate, the gate stack including:
a hard mask layer;a control gate layer; anda conducting material layer covered by the hard mask layer; and spacers covering sides of the conducting material layer while exposing sides of the control gate layer, wherein the conducting material layer comprises TaN. |
| 地址 |
Boise ID US |
