NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT HAVING SUPERIOR CURRENT SPREADING EFFECT AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed are a nitride semiconductor light-emitting element having a superior current spreading effect as a result of using a current spreading part containing current spreading impurities, and a method for manufacturing same. The nitride semiconductor light-emitting element according to the present invention comprises: an n-type nitride layer; a current spreading part, which is formed from nitride comprising current spreading impurities, and which is disposed on the n-type nitride layer; an activation layer disposed on the current spreading part; and a p-type nitride layer disposed on the activation layer, wherein the current spreading impurities comprise carbon (C).

主权项

1. A nitride semiconductor light emitting device comprising:
an n-type nitride layer; a current spreading part formed of a nitride including current spreading impurities and disposed on the n-type nitride layer; an activation layer formed on the current spreading part; and a p-type nitride layer formed on the activation layer, wherein the current spreading impurities comprise carbon (C), and the current spreading part is formed by doping the current spreading impurities together with a silicon dopant.