VERTICAL BIPOLAR TRANSISTOR

摘要

The disclosure relates to an integrated circuit comprising a transistor comprising first and second conduction terminals and a control terminal. The integrated circuit further comprises a stack of a first dielectric layer, a conductive layer, and a second dielectric layer, the first conduction terminal comprising a first semiconductor region formed in the first dielectric layer, the control terminal comprising a second semiconductor region formed in the conductive layer, and the second conduction terminal comprising a third semiconductor region formed in the second dielectric layer.

主权项

1. An integrated circuit, comprising:
a transistor having:
first and second conduction terminals;a control terminal;a stack of a first dielectric layer, a conductive layer, and a second dielectric layer,the first conduction terminal of the transistor including a first semiconductor region of a first conductivity type formed in the first dielectric layer,the control terminal of the transistor including a second semiconductor region of a second conductivity type formed in the conductive layer, andthe second conduction terminal of the transistor including a third semiconductor region of the first conductivity type formed in the second dielectric layer.