| 摘要 |
The present invention relates to a vertical type resistance memory device and a manufacturing method thereof capable of increasing current density by extending the size of a selection device in the vertical type resistance change memory having a resistance change material layer in a crossing point where a plurality of horizontal electrodes, and a plurality of vertical electrodes cross. The vertical type resistance memory device comprises a plurality of horizontal electrodes which laminated at constant intervals and is extended to a horizontal direction; interlayer insulating layers which are formed among the horizontal electrodes; a plurality of vertical electrodes which penetrates the horizontal electrodes and the interlayer insulating layers in the vertical direction and which have crossing points with the horizontal electrodes; a selection device function layer which is extended to a length direction according to the side walls of the vertical electrodes and controls passing current amount according to the size of voltage or polarity; a conductive layer which is formed on the interlayer insulating layers and the selection device function layer; and a resistance change material layer which varies a resistance value according to the applied voltage. |
