发明名称 METHOD OF CONTROLLING AN ION IMPLANTER IN PLASMA IMMERSION MODE
摘要 The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising: an electricity generator; a first switch SW1 connected between the generator and the output terminal of the substrate power supply; and a second switch SW2 connected between the output terminal and a neutralization terminal; the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP.
申请公布号 KR20140088101(A) 申请公布日期 2014.07.09
申请号 KR20147010196 申请日期 2012.10.04
申请人 ION BEAM SERVICES 发明人 TORREGROSA FRANK;ROUX LAURENT
分类号 H01J37/32;C23C14/48;H01L21/223 主分类号 H01J37/32
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