THE ETCHING METHOD OF SILICON CARBIDE BY OXIDIZING AGENT ADDITIVE MOLTEN SALT

摘要

The present invention relates to an etching method of a high concentration silicon carbide using an etchant in which an oxidizing agent is added. The technical point of the present invention relates to the etching method of the high concentration silicon carbide comprising; a first step of receiving the etchant which is formed of a potassium superoxide in a melting pot; a second step of fusing the etchant of the first step in a heating furnace; a third step of soaking a high concentration silicon carbide substrate in the fused etchant passing the second step and etching it at 450°C to 660°C; and a fourth step of cooling and cleaning the silicon carbide etched in the third step. Therefore, an etchant is formed by mixing a sodium peroxide (Na2O2) and a potassium superoxide (KO2) capable of supplying oxygen to the etchant smoothly while having an incomplete structure. The anisotropic etching for the surface of the high concentration doped silicon carbide is intensified using the etchant. A surface defect of the high concentration doped silicon carbide is easily analyzed.