发明名称 Memory system and operation method thereof
摘要 A memory system includes: a first non-volatile memory used for storing data to be accessed in block units; a second non-volatile memory used for storing data to be accessed in word units in random accesses to the second non-volatile memory; and a control section configured to control operations of the first and second non-volatile memories, wherein error correction codes to be applied to data stored in the second non-volatile memory are held in the first non-volatile memory.
申请公布号 US8775905(B2) 申请公布日期 2014.07.08
申请号 US201113328399 申请日期 2011.12.16
申请人 Sony Corporation 发明人 Nakanishi Kenichi
分类号 G11C29/00 主分类号 G11C29/00
代理机构 Sony Corporation 代理人 Sony Corporation
主权项 1. A memory system comprising: a first non-volatile memory operable to store data to be accessed in units of blocks, wherein each of said blocks is divided into a first area and a second area; a second non-volatile memory operable to store data to be accessed in word units in random accesses to said second non-volatile memory; and a control section operable to control operations of said first and second non-volatile memories, wherein first error correction codes to be applied to said data stored in said first non-volatile memory are stored in said second area of one or more of said blocks of said first non-volatile memory, wherein second error correction codes to be applied to said data stored in said second non-volatile memory are stored in said first area of said one or more of said blocks, and wherein said second error correction codes are associated with consecutive addresses in said second non-volatile memory.
地址 Tokyo JP