Semiconductor device with copper wire having different width portions

摘要

To improve reliability of a semiconductor device in which wire bonding using a wire made of copper is performed. A semiconductor device is configured so that one of end parts (wide width part) of a copper wire is joined via a bump on a pad (electrode pad) formed over a main surface (first main surface) of a semiconductor chip of the semiconductor device. The bump is made of gold, which is a metal material having a hardness lower than that of copper, and the width of the bump is narrower than the width of the wide width part of the wire.

主权项

1. A semiconductor device, comprising:
a first semiconductor chip including
a first main surface,a first back surface opposite to the first main surface, anda first electrode pad formed over the first main surface, a surface of the first electrode pad having a first recess; a terminal arranged next to the first semiconductor chip in plan view; and a first wire electrically connecting the first electrode pad with the terminal, wherein the first wire comprises copper; the first wire has a first wire diameter part and a first wide width part formed at one end part of the first wire diameter part; a width of the first wide width part is greater than that of the first wire diameter part; the first wide width part of the first wire is electrically connected with the first electrode pad via a first bump covering the first recess such that the first wide width part of the first wire overlaps both the first recess and a part of the surface of the first electrode pad where there is no first recess; and the first bump comprises a metal material having hardness lower than that of copper; wherein a first insulating film is formed over the first main surface such that the first electrode pad has an exposed surface in a first opening formed in the first insulating film opposite an exposed portion of the first wide width part; and a width of the first wide width part is greater than that of the first opening formed in the first insulating film.