CMP SLURRY COMPOSITION FOR COPPER AND POLISHING METHOD USING THE SAME

摘要

A CMP slurry composition for polishing copper of the present invention comprises polishing particles and deionized water, wherein the polishing particles are characterized by comprising organic particles having a positive zeta potential. Specifically, the present invention relates to a CMP slurry composition used for polishing a metal wire like a copper wire during manufacturing a semiconductor, and to a polishing method. The composition of the present invention can increase the polishing power when polishing a metal wire, especially a copper wire.