GAN LED USING NANO WIRE STRUCTURE INCLUDING QUANTUM DOTS AND PREPARATION METHOD THEREOF

摘要

The present invention relates to a gallium nitride light emitting diode including; a substrate; an absorption layer formed on one surface of the substrate; an N type gallium nitride semiconductor layer formed at an upper portion of the absorption layer; a nano wire which has grown upon a surface of the N type gallium nitride semiconductor layer; a nano wire shell layer coated on the N type gallium nitride semiconductor layer; a P type gallium nitride semiconductor layer formed on the N type gallium nitride semiconductor layer coated with the nano wire shell layer; and a transparent electrode formed on the P type gallium nitride semiconductor layer, wherein quantum dots having a core shell structure are added to surfaces of the N type gallium nitride semiconductor layer and the nano wire. The gallium nitride light emitting diode having a nano wire structure to which quantum dots are added according to to the present invention has surface convexo-concaves due to the nano wire having grown on the N type semiconductor layer to significantly increase a surface of a border layer where light is generated, reinforces light as quantum dots having a core shell structure generates a fluorescence resonance energy transfer phenomenon, and remarkably improves efficiency of light by forming a muntilayered quantum wall structure.