发明名称 RADIO FREQUENCY SWITCH CIRCUIT
摘要 The present invention relates to a high-frequency switch circuit which may include a first switch circuit which is connected between a first node connected to a first signal port and a common node connected to a common port and is operated by a first control signal; a second switch circuit which is connected between a second node connected to a second signal port and the common node and is operated by a second control signal having the opposite phase of the first control signal; a first shunt circuit which is connected between the second node and the ground and is operated by the first control signal; a second shunt circuit which is connected between the first node and the ground and is operated by the second control signal; a first inductance circuit which is connected to the first shunt circuit in parallel and performs first parallel resonance in an off-state of the first shunt circuit; and a second inductance circuit which is connected to the second shunt circuit in parallel and performs second parallel resonance in an off-state of the second shunt circuit.
申请公布号 KR20140086487(A) 申请公布日期 2014.07.08
申请号 KR20120157055 申请日期 2012.12.28
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 PARK, SANG WOOK;KIM, JEONG HOON;PARK, SUNG HWAN
分类号 H03K17/687;H04B1/44 主分类号 H03K17/687
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