| 发明名称 | Supercritical drying method for semiconductor substrate and supercritical drying apparatus | ||
| 摘要 | According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. | ||
| 申请公布号 | US8771429(B2) | 申请公布日期 | 2014.07.08 |
| 申请号 | US201213420870 | 申请日期 | 2012.03.15 |
| 申请人 | Kabushiki Kaisha Toshiba;Tokyo Electron Limited | 发明人 | Ji Linan;Hayashi Hidekazu;Tomita Hiroshi;Okuchi Hisashi;Sato Yohei;Toshima Takayuki;Iwashita Mitsuaki;Mitsuoka Kazuyuki;You Gen;Ohno Hiroki;Orii Takehiko |
| 分类号 | B08B7/00 | 主分类号 | B08B7/00 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. |
| 主权项 | 1. A supercritical drying method for a semiconductor substrate, comprising: introducing the semiconductor substrate into a chamber, a surface of the semiconductor substrate being wet with alcohol; substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide; discharging the supercritical fluid and the alcohol from the chamber while reducing a pressure inside the chamber; and performing a baking treatment in the treatment chamber while supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber. | ||
| 地址 | Tokyo JP | ||