发明名称 Display device
摘要 The invention provides a technique to manufacture a display device with high image quality and reliability at low cost with high yield. According to the invention, a spacer is provided over a pixel electrode layer in a pixel region. Moreover, a surface of an insulating layer which functions as a partition which covers the periphery of the pixel electrode layer is formed at a high position from the surface of the pixel electrode due to stacked layers under the insulating layer. These spacer and insulator which function as a spacer support a mask used for selectively forming a light emitting material over a pixel electrode layer, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection of the mask. Accordingly, such a damage as a crack does not occur in the pixel electrode layer which results in having no defect in shape. Therefore, a display device which performs a high resolution display with high reliability can be manufactured.
申请公布号 US8772783(B2) 申请公布日期 2014.07.08
申请号 US200511240568 申请日期 2005.10.03
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Hirosue Misako;Katayama Masahiro;Yamazaki Shunpei
分类号 H01L27/14;H01L27/146 主分类号 H01L27/14
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP ;Costellia Jeffrey L.
主权项 1. A display device comprising: a pixel comprising: a substrate;a semiconductor layer over the substrate;a gate insulating layer over the semiconductor layer;a gate electrode layer over the gate insulating layer;an insulating layer over the gate electrode layer;a source electrode layer or a drain electrode layer over the insulating layer;a first electrode layer in contact with the source electrode layer or the drain electrode layer over the insulating layer;an insulator covering and being in contact with the insulating layer, the source electrode layer or the drain electrode layer, and a portion of the first electrode layer;an electroluminescent layer over and in contact with a first surface of the first electrode layer and the insulator; anda second electrode layer over and in contact with the electroluminescent layer and the insulator, wherein the insulator has a first projection portion over a region where the source electrode layer or the drain electrode layer overlaps with the gate electrode layer, wherein the insulator has a second projection portion over the source electrode layer or the drain electrode layer, wherein the second projection portion does not overlap with the gate electrode layer, wherein a height of the first projection portion from a surface of the substrate is higher than a height of the second projection portion from the surface of the substrate; wherein the insulator covers a periphery of the first electrode layer, and wherein the insulator crosses over the first surface of the first electrode layer parallel to a short side of the first surface of the first electrode layer in two places so that the insulator has a first aperture, a second aperture and a third aperture overlapping with the first surface of the first electrode layer.
地址 Kanagawa-ken JP