| 摘要 |
The objective of the present invention provides a semiconductor device which forms a device isolation region of a hallow shape by closing the open end part of a trench without performing complex processes, and a manufacturing method thereof. According to one embodiment of the present invention, a method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes a process of forming a trench from the upper surface of a semiconductor layer to a lower part in a position where the device isolation region of a semiconductor layer is formed, and a process of closing the open end part of a trench by melting the upper surface of the semiconductor layer having the trench. |
