| 摘要 |
PURPOSE: An apparatus for growing an ingot and a method for manufacturing the same are provided to easily check the state of a node by using an infrared measurement part. CONSTITUTION: Melted silicon(SM) is filled in a crucible(20). A pulling device(30) raises an ingot from the melted silicon. The ingot includes a protruded node. An infrared measurement part(50) measures infrared rays generated from the interface of the ingot and the melted silicon. A control unit(60) calculates the peak of the infrared ray. |
