| 摘要 |
According to an embodiment, a semiconductor device includes a first semiconductor part and a conductive electrode. The first semiconductor part is made of SiC. The SiC contains a first element as an n-type or p-type impurity. The first semiconductor part has a first interface part. The first interface part is configured to have the maximum area density of the first element. The c conductive electrode is electrically connected to the first interface part. |
