| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory in which the leak current between the electrodes of a ferroelectric capacitor is small, and to provide a method of manufacturing the ferroelectric memory.SOLUTION: A first conductor film 22 is formed above a semiconductor substrate 10. Subsequently, a ferroelectric film 23 is formed on the first conductor film 22. Thereafter, a metal atom supply film 24 is formed on the ferroelectric film 23. Metal atoms are diffused from the metal atom supply film 24 to the boundary surface of the first conductor film 22 and ferroelectric film 23 by performing heat treatment, thus forming a metal dispersion layer 26, where the metal atoms are dispersed, on the boundary surface of the first conductor film 22 and ferroelectric film 23. |
