| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an EUV mask blank having improving characteristics as an EUV mask blank and comprising an absorption layer with excellent smoothness over a wide composition range.SOLUTION: A manufacturing method of a reflective mask blank for EUV lithography (EUVL) is provided for manufacturing the reflective mask blank for EUVL by forming a multilayer reflecting film 12 reflecting EUV light on a deposition surface of a substrate, then forming a protection layer 14 of the multilayer reflecting film 12 on the multilayer reflecting film 12 and forming an absorption layer absorbing the EUV light on the protection layer 14. The manufacturing method of the reflective mask blank for EUVL is characterized in that the multilayer reflecting film 12 is an Mo/Si multilayer reflecting film, the protection layer 14 is an Ru layer or an Ru chemical compound layer, the absorption layer 16 is a layer containing at least Ta and N, the protection layer 14 is formed and the absorption layer 16 is then formed after forming an Si membrane or an Si oxidized membrane 15 of which the thickness is 2 nm or less, on the protection layer 14. |
