SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME

摘要

The present technology provides a semiconductor device capable of reducing parasitic capacitance between adjacent conductive structures, and a method for fabricating the same. The method for fabricating the semiconductor device according to the present technology includes the steps of forming a plurality of bit line structures on a substrate; forming a contact hole between the bit line structures; forming a sacrificial spacer on a sidewall of the contact hole; recessing a first plug in the contact hole; forming an air-gap by removing the sacrificial spacer; forming a conductive capping layer to cap the first plug and the air-gap; forming a stabilization layer on the conductive capping layer; and forming a second plug on the stabilization layer. According to the present technology, the air-gap is capped by using the conductive capping layer to prevent the air gap from being opened in the subsequent process, and an open margin for the formation of the second plug can be ensured.