| 摘要 |
<p>The present technique is to provide a nonvolatile memory device which reduces current consumption and prevents over-erasing, and a method of fabricating the same. For this, the present technique provides a nonvolatile memory device which includes a memory gate where a memory layer and a gate electrode are stacked on a substrate; a gate pattern which includes the memory gate and a selection gate which is formed at both sides of the memory gate; a source region and a drain region which are formed at both substrates of the gate pattern; and a gate contact which connects the selection gate and the gate electrode of the memory gate.</p> |
