FURNACE FOR FABRICATING GALLIUM NITRIDE SUBSTRATE

摘要

The present invention relates to a growth furnace for manufacturing a gallium nitride substrate and, more specifically, to a growth furnace for manufacturing a gallium nitride substrate for growing a gallium nitride thin film on a substrate using an HVPE growth method. For the same, the present invention includes: a reaction tube having a reaction space for enabling the growth of the gallium nitride thin film on a substrate arranged on the inside; and a gas supplier installed on one side of the reaction tube to inject reactant gases into the reaction tube. The reaction tube is made of pyrolytic graphite.