发明名称 |
METHOD OF MANUFACTURING INTERCONNECTION AND SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing an interconnection of an embodiment includes: forming a via which penetrates an interlayer insulation film on a substrate; forming an underlying film in the via; removing the underlying film on a bottom part of the via; forming a catalyst metal inactivation film on the underlying film; removing the inactivation film on the bottom part of the via; forming a catalyst metal film on the bottom part of the via on which the inactivation film is removed; performing a first plasma treatment and a second plasma treatment using a gas not containing carbon on a member in which the catalyst metal film is formed; forming a graphite layer on the catalyst film after the first and second plasma treatment processes; and causing a growth of a carbon nanotube from the catalyst film on which the graphite layer is formed. |
申请公布号 |
US2014187033(A1) |
申请公布日期 |
2014.07.03 |
申请号 |
US201314140731 |
申请日期 |
2013.12.26 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
YAMAZAKI Yuichi;Sakai Tadashi |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing an interconnection, the method comprising:
forming a via which penetrates an interlayer insulation film on a substrate; forming an underlying film in the via; removing the underlying film on a bottom part of the via; forming a catalyst metal inactivation film on the underlying film; removing the catalyst metal inactivation film on the bottom part of the via; forming a catalyst metal film on the bottom part of the via on which the catalyst metal inactivation film is removed; performing a first plasma treatment and a second plasma treatment using a gas not containing carbon on a member in which the catalyst metal film is formed; forming a graphite layer on the catalyst metal film after the first and second plasma treatment processes; and causing a growth of a carbon nanotube from the catalyst metal film on which the graphite layer is formed, wherein a plasma gas pressure of the first plasma treatment is higher than that of the second plasma treatment. |
地址 |
Minato-ku JP |