发明名称 ASYMMETRIC RETICLE HEATING OF MULTILAYER RETICLES ELIMINATED BY DUMMY EXPOSURES AND RELATED METHODS
摘要 Asymmetric heating and/or thermal expansion of a reticle or an image field is reduced. Embodiments include exposing a wafer with an actual image field (including a pattern for a chip layer) on a multilayer reticle, and performing a dummy exposure with another image field of the reticle. Other embodiments include exposing a wafer with a reticle area including both the actual and one or more other image fields of a multilayer reticle, sacrificing any die on the wafer that is exposed with substantial illumination with an image field other than the actual image field. Further embodiments include dummy exposures or enlargement of the illuminated reticle area of a single layer reticle with variation in pattern density between regions of the image field. Further embodiments include changing the image field geometry of a multilayer or single layer reticle.
申请公布号 US2014185030(A1) 申请公布日期 2014.07.03
申请号 US201213730171 申请日期 2012.12.28
申请人 HOTZEL Arthur;Ruhm Matthias;Cotte Eric 发明人 HOTZEL Arthur;Ruhm Matthias;Cotte Eric
分类号 G03F7/26 主分类号 G03F7/26
代理机构 代理人
主权项 1. A method comprising: performing one or more exposures of a wafer with an actual image field on a reticle, the actual image field including a pattern for a chip layer; and performing one or more dummy exposures with portions of the reticle outside the actual image field and/or portions of the actual image field to reduce asymmetric heating and/or asymmetric thermal expansion of the reticle and/or asymmetric thermal expansion of the actual image field.
地址 Dresden DE