发明名称 NONVOLATILE MEMORY AND METHOD WITH IMPROVED I/O INTERFACE
摘要 <p>Each I/O channel between a controller and one or more memory dice of a memory device has a driver on one end and a receiver at the other end. The receiver is optionally terminated with a pseudo open-drain ("POD") termination instead of the conventional center-tapped ("CTT") termination to save energy. During a read operation, data is driven from the memory die to a POD terminated receiver circuit in the controller. With POD termination, the degradation in performance due to the more non-linear driver in the memory die, fabricated for example in the NAND technology processing, is alleviated by an adaptive reference voltage level adjustment in the receiver circuit of the controller. Optionally, the receiver circuit of a memory die is also provided with an adaptive reference level adjustment.</p>
申请公布号 WO2014105537(A1) 申请公布日期 2014.07.03
申请号 WO2013US75866 申请日期 2013.12.17
申请人 SANDISK TECHNOLOGIES INC. 发明人 RAMACHANDRA, VENKATESH PRASAD
分类号 G11C7/22;G11C8/10 主分类号 G11C7/22
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