| 发明名称 |
Thin Film Silicon Nitride Barrier Layers On Flexible Substrate |
| 摘要 |
An article comprising a polymeric substrate and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress not greater than about 400 MPa and a density of at least about 1.5 g/cm3. The article is preferably an optical device, such as an organic light emitting diode (OLED) or a photovoltaic (PV) module, wherein a silicon nitride barrier layer has been directly deposited on a flexible polymeric substrate via plasma enhanced chemical vapor deposition (PECVD). |
| 申请公布号 |
US2014183498(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201314136951 |
申请日期 |
2013.12.20 |
| 申请人 |
Saint-Gobain Performance Plastics Corporation |
发明人 |
Dhar Anirban;Giassi Alessandro |
| 分类号 |
H01L51/52;H01L51/44;B32B27/06 |
主分类号 |
H01L51/52 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An article comprising:
a polymeric substrate, and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress not greater than about 400 MPa and a density of at least about 1.5 g/cm3. |
| 地址 |
Aurora OH US |
