发明名称 |
POLYCRYSTALLINE SILICON ROD AND METHOD FOR PRODUCING SAME |
摘要 |
<p>[Problem] The purpose of the present invention is to provide a polycrystalline silicon rod which is obtained by vapor deposition on a silicon core wire, and which is reduced in the oxygen concentration at the silicon core wire interface. [Solution] A polycrystalline silicon rod obtained by vapor deposition on a silicon core wire, wherein the oxygen concentration at the silicon core wire interface is 5-200 ppba.</p> |
申请公布号 |
WO2014103939(A1) |
申请公布日期 |
2014.07.03 |
申请号 |
WO2013JP84275 |
申请日期 |
2013.12.20 |
申请人 |
TOKUYAMA CORPORATION |
发明人 |
IMURA, TETSUYA;AIMOTO, YASUMASA;ISHIDA, HARUYUKI |
分类号 |
C01B33/035 |
主分类号 |
C01B33/035 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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