发明名称 POLYCRYSTALLINE SILICON ROD AND METHOD FOR PRODUCING SAME
摘要 <p>[Problem] The purpose of the present invention is to provide a polycrystalline silicon rod which is obtained by vapor deposition on a silicon core wire, and which is reduced in the oxygen concentration at the silicon core wire interface. [Solution] A polycrystalline silicon rod obtained by vapor deposition on a silicon core wire, wherein the oxygen concentration at the silicon core wire interface is 5-200 ppba.</p>
申请公布号 WO2014103939(A1) 申请公布日期 2014.07.03
申请号 WO2013JP84275 申请日期 2013.12.20
申请人 TOKUYAMA CORPORATION 发明人 IMURA, TETSUYA;AIMOTO, YASUMASA;ISHIDA, HARUYUKI
分类号 C01B33/035 主分类号 C01B33/035
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