Poly Removal for replacement gate with an APM mixture

摘要

A method for removing poly-silicon dummy gate structures using an ammonium hydroxide-hydrogen peroxide-water (APM) solution with concentrations between 1:10:20 and 1:1:2 and at temperatures between 20 C and 80 C for times between 1 minute and 60 minutes.

主权项

1. A method for removing a dummy gate layer from a substrate, the method comprising:
preparing a solution, wherein the solution comprises ammonium hydroxide, hydrogen peroxide, and water, exposing the substrate to the solution; and rinsing the substrate, wherein a ratio of ammonium hydroxide:hydrogen peroxide:water is between 1:10:20 and 1:1:2.