| 发明名称 |
METHOD OF ETCHING A POROUS DIELECTRIC MATERIAL |
| 摘要 |
The invention relates to a method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with oxygen (O2) and/or nitrogen (N2) so as to grow a passivation layer all along said etching, at least on flanks of the layer of porous dielectric material and wherein the silicon-based gas is taken from all the compounds of the type SixHy for which the ratio x/y is equal or greater than 0.3 or is taken from all the compounds of the following types: SixFy and SixCly, where x is the proportion of silicon (Si) in the gas and y is the proportion of fluorine (F) or chlorine (Cl) or hydrogen (H) in the gas. |
| 申请公布号 |
US2014187035(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201314142124 |
申请日期 |
2013.12.27 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT ;APPLIED MATERIALS, Inc. ;CNRS Centre National de la Recherche Scientifique |
发明人 |
POSSEME Nicolas;BARNOLA Sebastien;JOUBERT Olivier;NEMANI Srinivas;VALLIER Laurent |
| 分类号 |
H01L21/311;H01L21/768 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of etching a layer of porous dielectric material, characterized in that the etching is performed in a plasma formed from at least one silicon-based gas mixed with oxygen (O2) and/or nitrogen (N2) so as to grow a passivation layer all along said etching, at least on flanks of the layer of porous dielectric material and wherein the silicon-based gas is taken from all the compounds of the type SixHy for which the ratio x/y is equal or greater than 0.3 or is taken from all the compounds of the following types: SixFy and SixCly, where x is the proportion of silicon (Si) in the gas and y is the proportion of fluorine (F) or chlorine (Cl) or hydrogen (H) in the gas. |
| 地址 |
Paris FR |
