发明名称 METHOD FOR CALCULATING WARPAGE OF BONDED SOI WAFER AND METHOD FOR MANUFACTURING BONDED SOI WAFER
摘要 A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant concentration of the bond wafer; calculating a warpage A that occurs at the time of performing the epitaxial growth relative to the assumed silicon single crystal wafer; calculating a warpage B caused due to a thickness of the BOX layer of the epitaxial growth SOI wafer; determining a measured value of a warpage of the base wafer before bonding as a warpage C; and calculating a sum of the warpages (A+B+C) as the warpage of the bonded SOI wafer.
申请公布号 US2014186977(A1) 申请公布日期 2014.07.03
申请号 US201214240432 申请日期 2012.08.21
申请人 Yokokawa Isao;Aga Hiroji;Mizusawa Yasushi 发明人 Yokokawa Isao;Aga Hiroji;Mizusawa Yasushi
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址 Annaka JP