发明名称 |
METHOD FOR CALCULATING WARPAGE OF BONDED SOI WAFER AND METHOD FOR MANUFACTURING BONDED SOI WAFER |
摘要 |
A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant concentration of the bond wafer; calculating a warpage A that occurs at the time of performing the epitaxial growth relative to the assumed silicon single crystal wafer; calculating a warpage B caused due to a thickness of the BOX layer of the epitaxial growth SOI wafer; determining a measured value of a warpage of the base wafer before bonding as a warpage C; and calculating a sum of the warpages (A+B+C) as the warpage of the bonded SOI wafer. |
申请公布号 |
US2014186977(A1) |
申请公布日期 |
2014.07.03 |
申请号 |
US201214240432 |
申请日期 |
2012.08.21 |
申请人 |
Yokokawa Isao;Aga Hiroji;Mizusawa Yasushi |
发明人 |
Yokokawa Isao;Aga Hiroji;Mizusawa Yasushi |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Annaka JP |