发明名称 METHOD OF CREATING TWO DIMENSIONAL DOPING PATTERNS IN SOLAR CELLS
摘要 <p>An improved method of fabricating an interdigitated back contact (IBC) solar cell is disclosed. A first mask is used to perform a patterned ion implantation of n-type dopant to create the back surface field. A second mask is then used to create the p-type emitter on the same surface. The second mask may be aligned to the n-type implant, and may be used in a plurality of orientations to create the desired p-type emitter. In some embodiments, a p-type blanket implant is performed as well. In some embodiments, a doping gradient is created.</p>
申请公布号 WO2013055627(A9) 申请公布日期 2014.07.03
申请号 WO2012US59238 申请日期 2012.10.08
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;GRAFF, JOHN, W.;RIORDON, BENJAMIN, B.;BATEMAN, NICHOLAS, P.T.;OLSON, JOSEPH, C. 发明人 GRAFF, JOHN, W.;RIORDON, BENJAMIN, B.;BATEMAN, NICHOLAS, P.T.;OLSON, JOSEPH, C.
分类号 H01L31/18;H01J37/317;H01L21/266;H01L31/0224;H01L31/068 主分类号 H01L31/18
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