发明名称 SINGLE PHOTOMASK HIGH PRECISION THIN FILM RESISTOR
摘要 An integrated circuit contains a thin film resistor in which a body of the thin film resistor is disposed over a lower dielectric layer in a system of interconnects in the integrated circuit. Heads of the thin film resistor are disposed over electrodes which are interconnect elements in the lower dielectric layer, which provide electrical connections to a bottom surface of the thin film resistor. Top surfaces of the electrodes are substantially coplanar with a top surface of the lower dielectric layer. A top surface of the thin film resistor is free of electrical connections. An upper dielectric layer is disposed over the thin film resistor.
申请公布号 US2014184381(A1) 申请公布日期 2014.07.03
申请号 US201314046177 申请日期 2013.10.04
申请人 Texas Instruments Incorporated 发明人 HAO PingHai;WANG Fuchao;Yue Duofeng
分类号 H01C1/012;H01C17/06 主分类号 H01C1/012
代理机构 代理人
主权项 1. An integrated circuit, comprising: a lower dielectric layer disposed above active components of said integrated circuit; electrodes disposed in said lower dielectric layer, such that top surfaces of said electrodes are substantially coplanar with a top surface of said lower dielectric layer between said electrodes; a thin film resistor disposed over said lower dielectric layer, said thin film resistor making electrical connections to said top surfaces of said electrodes at a bottom surface of said thin film resistor, so that a top surface of said thin film resistor is free of electrical connections; and an upper dielectric layer disposed over said thin film resistor and said lower dielectric layer.
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