| 发明名称 |
SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND VAPORIZATION SYSTEM |
| 摘要 |
A substrate processing apparatus includes: a processing chamber configured to accommodate a substrate; a vaporized gas supply system which includes a vaporizer to vaporize a liquid precursor into a vaporized gas and is configured to supply the vaporized gas into the processing chamber; and a control unit configured to control the vaporized gas supply system to supply a liquid precursor and a carrier gas into a vaporization chamber formed in the vaporizer such that a ratio of a partial pressure of the liquid precursor to a total pressure in the vaporization chamber is equal to or lower than 20%. |
| 申请公布号 |
US2014182515(A1) |
申请公布日期 |
2014.07.03 |
| 申请号 |
US201314140837 |
申请日期 |
2013.12.26 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
YAMAZAKI Hirohisa;TAKEBAYASHI Yuji |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus comprising:
a processing chamber configured to accommodate a substrate; a vaporized gas supply system which includes a vaporizer to vaporize a liquid precursor into a vaporized gas and is configured to supply the vaporized gas into the processing chamber; and a control unit configured to control the vaporized gas supply system to supply the liquid precursor and a carrier gas into a vaporization chamber formed in the vaporizer such that a ratio of a partial pressure of the liquid precursor to a total pressure in the vaporization chamber is equal to or lower than 20%. |
| 地址 |
Tokyo JP |
