发明名称 PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) SOURCE
摘要 One embodiment is directed to a plasma source comprising a body in which a cavity is formed and at least two self-contained magnetron assemblies disposed within the cavity. The magnetron assemblies are mutually electrically isolated from each other and from the body. In one implementation of such an embodiment, the self-contained magnetron assemblies comprise closed-drift magnetron assemblies. Other embodiments are disclosed.
申请公布号 WO2014105819(A1) 申请公布日期 2014.07.03
申请号 WO2013US77474 申请日期 2013.12.23
申请人 SPUTTERING COMPONENTS, INC. 发明人 CROWLEY, DANIEL THEODORE;MORSE, PATRICK LAWRENCE;MEREDITH, JR., WILLIAM A.;GERMAN, JOHN ROBERT;NEAL, MICHELLE LYNN
分类号 C23C16/50;C23C16/513 主分类号 C23C16/50
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